MUR60120PT MUR60120PT v rsm v 1200 v rrm v 1200 symbol test conditions maximum ratings unit i frms i favm i frm t vj =t vjm t c =85 o c; rectangular, d=0.5 t p <10us; rep. rating, pulse width limited by t vjm 50 60 375 a t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 200 210 185 195 a i fsm t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 200 180 170 160 a 2 s i 2 t t vj t vjm t stg -40...+150 150 -40...+150 o c p tot t c =25 o c m d mounting torque 125 0.8...1.2 6 w nm weight g a=anode, c=cathode, tab=cathode a a c c(tab) a c a dimensions to-247ad dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 ultra fast recovery diodes w \ s l f d o p1 ?2008 sirectifier electronics technology corp. all rights reserved www.sirectifier.com
MUR60120PT advantages * high reliability circuit operation * low voltage peaks for reduced protection circuits * lo w noise switching * low losses * operating at lower temperature or space saving by reduced cooling applications * rectifiers in switch mode power supplies (smps) * uninterruptible power supplies (ups) * ultrasonic cleaners and welders features * international standard package jedec to-247ad * glass passivated chips * very short recovery time * extremely low switching losses * low i rm -values * soft recovery behaviour symbol test conditions characteristic values typ. max. unit t vj =25 o c; v r =v rrm t vj =25 o c; v r =0.8 . v rrm t vj =125 o c; v r =0.8 . v rrm 750 250 7 ua ua ma i r i f =30a; t vj =150 o c t vj =25 o c 2.2 2.55 v v f r thjc r thck r thja 0.9 70 k/w 0.25 v r =540v; i f =30a; -di f /dt=240a/us; l<0.05uh; t vj =100 o c t rr i f =1a; -di/dt=100a/us; v r =30v; t vj =25 o c ns i rm 18 a 40 v to for power-loss calculations only 1.65 v r t 18.2 m t vj =t vjm 60 16 _ * rohs complian t p2 ?2008 sirectifier electronics technology corp. all rights reserved www.sirectifier.com
MUR60120PT 0. 0 0 1 0 . 0 1 0 .1 1 1 0 0.0 0.2 0.4 0.6 0.8 1.0 s t z thj c k/w 0 200 400 60 0 0 10 20 30 40 50 60 t vj =12 5 c i f =3 0a di f /d t t fr v fr t fr ns 0 200 40 0 60 0 80 0 10 00 12 00 v v fr 0 2 00 4 0 0 6 00 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 -d i f /dt t rr ty p . ma x . 0 4 0 8 0 120 160 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 k f q r i rm c t j 0 200 400 600 0 10 20 30 40 50 a max. typ . 1 1 0 1 00 1 000 0 1 2 3 4 5 6 c i rm -di f /d t q r 0 1234 0 10 20 30 40 50 60 70 v v f i f t vj =15 0 c t vj =10 0 c t vj =25 c a i f = 15a i f = 30a i f = 60a i f = 30a v r = 5 40v t vj = 100 c max . ty p. i f = 15a i f = 30a i f = 60a i f = 30a t vj =100 c v r = 540 v v r =54 0 v t vj =1 00 c i f = 15a i f = 30a i f = 60a i f = 30a s a/ s -d i f /d t a/ s a/ s a/ s fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. fig. 7 transient thermal impedance junction to case. ultra fast recovery diodes p3 ?2008 sirectifier electronics technology corp. all rights reserved www.sirectifier.com
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